NSBC114YPDXV6T5G
onsemi
onsemi
TRANS PREBIAS NPN/PNP 50V SOT563
$0.05
Available to order
Reference Price (USD)
1+
$0.05000
500+
$0.0495
1000+
$0.049
1500+
$0.0485
2000+
$0.048
2500+
$0.0475
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Maximize circuit reliability with onsemi's NSBC114YPDXV6T5G Pre-Biased Transistor Arrays, the smart choice for modern electronic designs. These BJT arrays combine multiple transistors with bias networks in single packages, offering space savings and improved thermal characteristics. Target applications span from portable electronics to industrial automation systems, particularly where stable amplification and fast switching are required. Key benefits include reduced component count, simplified assembly processes, and enhanced signal integrity. onsemi maintains strict quality control measures for all discrete semiconductor products. Interested in NSBC114YPDXV6T5G specifications or evaluation boards? Complete our brief inquiry form for prompt response!
Specifications
- Product Status: Last Time Buy
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
Related Products
Toshiba Semiconductor and Storage
RN2701JE(TE85L,F)
onsemi
NSVMUN5312DW1T2G
Toshiba Semiconductor and Storage
RN2504(TE85L,F)
onsemi
NSBC114EDP6T5G
Toshiba Semiconductor and Storage
RN2712JE(TE85L,F)
Rohm Semiconductor
FMG1AT148
Nexperia USA Inc.
PRMD13Z
onsemi
NSBC114EPDXVT1G
Nexperia USA Inc.
PBLS4005D,115
Diodes Incorporated