NST65011MW6T1G
onsemi
onsemi
TRANS 2NPN 65V 0.1A SC88
$0.39
Available to order
Reference Price (USD)
3,000+
$0.08760
6,000+
$0.07920
15,000+
$0.07080
30,000+
$0.06660
75,000+
$0.05960
Exquisite packaging
Discount
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Boost your circuit performance with onsemi's NST65011MW6T1G BJT Arrays, offering exceptional reliability and versatility. These arrays provide high voltage tolerance, precise current control, and compact packaging, suitable for portable electronics and embedded systems. Frequently used in audio processing, sensor interfaces, and automation controls. Get started today send us your requirements and we ll provide the best solution for your project!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 65V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 380mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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