NSTB60BDW1T1G
onsemi
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
$0.32
Available to order
Reference Price (USD)
3,000+
$0.05160
6,000+
$0.04511
15,000+
$0.03863
30,000+
$0.03646
75,000+
$0.03430
150,000+
$0.03069
Exquisite packaging
Discount
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Introducing onsemi's NSTB60BDW1T1G advanced Pre-Biased Transistor Arrays engineered for modern electronics. These BJT arrays provide ready-to-use solutions with internal resistor networks, significantly reducing design complexity and BOM costs. Application highlights include power supply circuits, display drivers, and microcontroller interfaces in automotive, aerospace, and industrial environments. Technical features comprise low VCE(sat), tight current gain matching, and RoHS compliance for environmental safety. onsemi stands behind every NSTB60BDW1T1G unit with rigorous quality testing. Streamline your procurement process contact our sales team via the inquiry form for personalized assistance!
Specifications
- Product Status: Active
- Transistor Type: 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 140MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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