NSVMUN5212DW1T1G
onsemi
onsemi
TRANS 2NPN PREBIAS 0.25W SOT363
$0.41
Available to order
Reference Price (USD)
3,000+
$0.07490
6,000+
$0.06548
15,000+
$0.05606
30,000+
$0.05292
75,000+
$0.04978
150,000+
$0.04455
Exquisite packaging
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Maximize circuit reliability with onsemi's NSVMUN5212DW1T1G Pre-Biased Transistor Arrays, the smart choice for modern electronic designs. These BJT arrays combine multiple transistors with bias networks in single packages, offering space savings and improved thermal characteristics. Target applications span from portable electronics to industrial automation systems, particularly where stable amplification and fast switching are required. Key benefits include reduced component count, simplified assembly processes, and enhanced signal integrity. onsemi maintains strict quality control measures for all discrete semiconductor products. Interested in NSVMUN5212DW1T1G specifications or evaluation boards? Complete our brief inquiry form for prompt response!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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