NTB25P06T4G
onsemi
onsemi
MOSFET P-CH 60V 27.5A D2PAK
$2.47
Available to order
Reference Price (USD)
1+
$2.47000
500+
$2.4453
1000+
$2.4206
1500+
$2.3959
2000+
$2.3712
2500+
$2.3465
Exquisite packaging
Discount
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Upgrade your electronic designs with NTB25P06T4G by onsemi, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, NTB25P06T4G ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 82mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 120W (Tj)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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