RJK0390DPA-00#J5A
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 30V 65A 8WPAK
$1.36
Available to order
Reference Price (USD)
1+
$1.36000
500+
$1.3464
1000+
$1.3328
1500+
$1.3192
2000+
$1.3056
2500+
$1.292
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose RJK0390DPA-00#J5A by Renesas Electronics America Inc. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with RJK0390DPA-00#J5A inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 2.2mOhm @ 32.5A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 60W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WPAK
- Package / Case: 8-WFDFN Exposed Pad
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