NTD4810NHT4G
onsemi
onsemi
MOSFET N-CH 30V 9A/54A DPAK
$0.27
Available to order
Reference Price (USD)
1+
$0.27000
500+
$0.2673
1000+
$0.2646
1500+
$0.2619
2000+
$0.2592
2500+
$0.2565
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of NTD4810NHT4G, a premium Transistors - FETs, MOSFETs - Single from onsemi. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, NTD4810NHT4G is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 54A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
IRFR430APBF
STMicroelectronics
STL3NM60N
Vishay Siliconix
SISHA12ADN-T1-GE3
Renesas Electronics America Inc
2SK2372(1)-A
onsemi
FQP50N06
IXYS
IXFH6N120P
onsemi
FDD86102
STMicroelectronics
STFI24NM60N
Diodes Incorporated
DMP2110U-13
Infineon Technologies