NTE16003
NTE Electronics, Inc
NTE Electronics, Inc
T-NPN SI RF PO=7.5 WATTS
$45.38
Available to order
Reference Price (USD)
1+
$45.38000
500+
$44.9262
1000+
$44.4724
1500+
$44.0186
2000+
$43.5648
2500+
$43.111
Exquisite packaging
Discount
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Discover high-performance NTE16003 RF Bipolar Transistors from NTE Electronics, Inc, designed for superior signal amplification in demanding applications. These transistors feature excellent high-frequency response, low noise, and reliable performance, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless devices, our BJT-RF transistors ensure stable operation under varying conditions. Contact us today for pricing and availability let our experts help you find the perfect solution for your RF needs!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 40V
- Frequency - Transition: 500MHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 11.6W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 1.5A
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Stud Mount
- Package / Case: TO-212MA, TO-210AB, TO-60-4, Stud
- Supplier Device Package: TO-60
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NTE Electronics, Inc