NTE2383
NTE Electronics, Inc
NTE Electronics, Inc
MOSFET P-CH 100V 10.5A TO220
$9.35
Available to order
Reference Price (USD)
1+
$9.35000
500+
$9.2565
1000+
$9.163
1500+
$9.0695
2000+
$8.976
2500+
$8.8825
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with NTE2383, a high-quality Transistors - FETs, MOSFETs - Single from NTE Electronics, Inc. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, NTE2383 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 300mOhm @ 5.3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 835 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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