NTE2390
NTE Electronics, Inc
NTE Electronics, Inc
MOSFET N-CHANNEL 60V 12A TO220
$3.30
Available to order
Reference Price (USD)
1+
$3.30000
500+
$3.267
1000+
$3.234
1500+
$3.201
2000+
$3.168
2500+
$3.135
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
NTE2390 by NTE Electronics, Inc is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, NTE2390 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 200mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
Related Products
Infineon Technologies
BSZ037N06LS5ATMA1
Harris Corporation
IRFR420
Rectron USA
RM3401Y
Panjit International Inc.
PJP60R620E_T0_00001
Nexperia USA Inc.
NX7002AKVL
Rectron USA
RM2A3P60S4
Microchip Technology
APT44F80B2
STMicroelectronics
STP15N80K5
Infineon Technologies
IPI80P03P4-05AKSA1
Toshiba Semiconductor and Storage