NTE2935
NTE Electronics, Inc
NTE Electronics, Inc
MOSFET N-CH 500V 6.2A TO3PML
$6.26
Available to order
Reference Price (USD)
1+
$6.26000
500+
$6.1974
1000+
$6.1348
1500+
$6.0722
2000+
$6.0096
2500+
$5.947
Exquisite packaging
Discount
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Discover NTE2935, a versatile Transistors - FETs, MOSFETs - Single solution from NTE Electronics, Inc, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 850mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 85W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PML
- Package / Case: TO-3P-3 Full Pack
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