SSM3J168F,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
MOSFET P-CH 60V 400MA S-MINI
$0.39
Available to order
Reference Price (USD)
3,000+
$0.10065
6,000+
$0.09455
15,000+
$0.08845
30,000+
$0.08540
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of SSM3J168F,LF, a premium Transistors - FETs, MOSFETs - Single from Toshiba Semiconductor and Storage. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SSM3J168F,LF is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 1.9Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
- Vgs (Max): +20V, -16V
- Input Capacitance (Ciss) (Max) @ Vds: 82 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
onsemi
FQD7N10LTM
Renesas Electronics America Inc
UPA2718GR-E2-AT
onsemi
MCH6337-TL-H
onsemi
FQPF13N50CF
IXYS
IXTB30N100L
Infineon Technologies
IPP80N06S4L07AKSA1
onsemi
NVTR01P02LT1G
onsemi
NTMFS6H800NLT1G
Infineon Technologies
IPI60R099CPXKSA1
Fairchild Semiconductor