NTE2960
NTE Electronics, Inc
NTE Electronics, Inc
MOSFET-N-CHAN ENHANCEMENT
$8.63
Available to order
Reference Price (USD)
1+
$8.63000
500+
$8.5437
1000+
$8.4574
1500+
$8.3711
2000+
$8.2848
2500+
$8.1985
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTE2960 from NTE Electronics, Inc is a top choice in the Discrete Semiconductor Products category, particularly for Transistors - FETs, MOSFETs - Arrays. With features like high breakdown voltage, low gate drive, and excellent thermal performance, these components are ideal for power electronics and high-frequency applications. Whether for consumer electronics or industrial machinery, NTE2960 delivers consistent quality. Contact us now to learn more and secure your supply of NTE Electronics, Inc s premium semiconductors.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 7A
- Rds On (Max) @ Id, Vgs: 2Ohm @ 3A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 25V
- Power - Max: 40W
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-220 Full Pack
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