NTE2987
NTE Electronics, Inc
NTE Electronics, Inc
MOSFET N-CH 100V 20A TO220
$4.65
Available to order
Reference Price (USD)
1+
$4.65000
500+
$4.6035
1000+
$4.557
1500+
$4.5105
2000+
$4.464
2500+
$4.4175
Exquisite packaging
Discount
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Discover NTE2987, a versatile Transistors - FETs, MOSFETs - Single solution from NTE Electronics, Inc, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 20A
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 120mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 5 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
- FET Feature: Logic Level Gate, 4V Drive
- Power Dissipation (Max): 105W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220
- Package / Case: TO-220-3
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