RF6E045AJTCR
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CHANNEL 30V 4.5A TUMT6
$0.66
Available to order
Reference Price (USD)
3,000+
$0.18197
6,000+
$0.17023
15,000+
$0.16436
Exquisite packaging
Discount
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Rohm Semiconductor presents RF6E045AJTCR, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, RF6E045AJTCR delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Rds On (Max) @ Id, Vgs: 23.7mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TUMT6
- Package / Case: 6-SMD, Flat Leads
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