NTE299
NTE Electronics, Inc
NTE Electronics, Inc
RF TRANS NPN 35V TO202
$3.22
Available to order
Reference Price (USD)
1+
$3.22000
500+
$3.1878
1000+
$3.1556
1500+
$3.1234
2000+
$3.0912
2500+
$3.059
Exquisite packaging
Discount
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Upgrade your RF designs with NTE Electronics, Inc's NTE299 Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how NTE299 can enhance your projects!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 35V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 4W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 10V
- Current - Collector (Ic) (Max): 1A
- Operating Temperature: 125°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-202 Long Tab
- Supplier Device Package: TO-202
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