NTH4L040N120SC1
onsemi
onsemi
SICFET N-CH 1200V 58A TO247-4
$31.62
Available to order
Reference Price (USD)
1+
$31.62000
500+
$31.3038
1000+
$30.9876
1500+
$30.6714
2000+
$30.3552
2500+
$30.039
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NTH4L040N120SC1 by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NTH4L040N120SC1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
- Vgs (Max): +25V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 1762 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 319W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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