NTH4LN019N65S3H
onsemi
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
$22.59
Available to order
Reference Price (USD)
1+
$22.59000
500+
$22.3641
1000+
$22.1382
1500+
$21.9123
2000+
$21.6864
2500+
$21.4605
Exquisite packaging
Discount
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Enhance your circuit performance with NTH4LN019N65S3H, a premium Transistors - FETs, MOSFETs - Single from onsemi. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust NTH4LN019N65S3H for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 19.3mOhm @ 37.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 14.3mA
- Gate Charge (Qg) (Max) @ Vgs: 282 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 15993 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 625W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
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