SCT3160KLHRC11
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 17A TO247N
$16.56
Available to order
Reference Price (USD)
1+
$12.54000
10+
$11.52700
25+
$11.04880
100+
$9.73500
450+
$9.25722
900+
$8.65998
Exquisite packaging
Discount
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Enhance your circuit performance with SCT3160KLHRC11, a premium Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust SCT3160KLHRC11 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 398 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 103W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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