NTHD3102CT1G
onsemi
onsemi
MOSFET N/P-CH 20V 4A/3.1A 1206A
$1.11
Available to order
Reference Price (USD)
3,000+
$0.26318
6,000+
$0.24503
15,000+
$0.23595
30,000+
$0.23100
Exquisite packaging
Discount
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Optimize your electronic circuits with onsemi s NTHD3102CT1G, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how NTHD3102CT1G can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4A, 3.1A
- Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: ChipFET™
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