NTHL041N60S5H
onsemi
onsemi
NTHL041N60S5H
$7.39
Available to order
Reference Price (USD)
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$7.39000
500+
$7.3161
1000+
$7.2422
1500+
$7.1683
2000+
$7.0944
2500+
$7.0205
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NTHL041N60S5H by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NTHL041N60S5H inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 41mOhm @ 28.5A, 10V
- Vgs(th) (Max) @ Id: 4.3V @ 6.7mA
- Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 5840 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 329W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
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