NTHL080N120SC1A
onsemi
onsemi
SICFET N-CH 1200V 31A TO247-3
$15.08
Available to order
Reference Price (USD)
1+
$15.08000
500+
$14.9292
1000+
$14.7784
1500+
$14.6276
2000+
$14.4768
2500+
$14.326
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance NTHL080N120SC1A from onsemi, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, NTHL080N120SC1A delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
- Vgs (Max): +25V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 178W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
Microchip Technology
APT80M60J
Renesas Electronics America Inc
RJK0703DPN-A0#T2
Vishay Siliconix
SQM40022EM_GE3
IXYS
IXTP140N12T2
STMicroelectronics
STL8N10F7
Infineon Technologies
BSZ130N03LSGATMA1
Infineon Technologies
IPD40DP06NMATMA1
onsemi
FDMC2674
Toshiba Semiconductor and Storage
TK12A50D(STA4,Q,M)
Diodes Incorporated