NTHS2101PT1
onsemi
onsemi
MOSFET P-CH 8V 5.4A CHIPFET
$0.15
Available to order
Reference Price (USD)
1+
$0.15000
500+
$0.1485
1000+
$0.147
1500+
$0.1455
2000+
$0.144
2500+
$0.1425
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NTHS2101PT1 by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NTHS2101PT1 inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8 V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 25mOhm @ 5.4A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 6.4 V
- FET Feature: -
- Power Dissipation (Max): 1.3W (Ta)
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: ChipFET™
- Package / Case: 8-SMD, Flat Lead
Related Products
Vishay Siliconix
SIHH070N60EF-T1GE3
Rohm Semiconductor
RQ3E075ATTB
Texas Instruments
CSD18512Q5B
STMicroelectronics
STL40N10F7
Toshiba Semiconductor and Storage
TK160F10N1,LXGQ
Vishay Siliconix
IRFR014TRLPBF
Nexperia USA Inc.
BUK969R3-100E,118
NXP USA Inc.
BUK9535-100A,127
Infineon Technologies
BSZ019N03LSATMA1
Vishay Siliconix