NTJS3151PT1G
onsemi
onsemi
MOSFET P-CH 12V 2.7A SC88/SC70-6
$0.48
Available to order
Reference Price (USD)
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$0.48000
500+
$0.4752
1000+
$0.4704
1500+
$0.4656
2000+
$0.4608
2500+
$0.456
Exquisite packaging
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Upgrade your electronic designs with NTJS3151PT1G by onsemi, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, NTJS3151PT1G ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 3.3A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 625mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-88/SC70-6/SOT-363
- Package / Case: 6-TSSOP, SC-88, SOT-363
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