NTMFS6H818NLT1G
onsemi
onsemi
MOSFET N-CH 80V 22A/135A 5DFN
$1.05
Available to order
Reference Price (USD)
1+
$1.05477
500+
$1.0442223
1000+
$1.0336746
1500+
$1.0231269
2000+
$1.0125792
2500+
$1.0020315
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NTMFS6H818NLT1G by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NTMFS6H818NLT1G inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 135A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 190µA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3844 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 140W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
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