SIHH24N65E-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 650V 23A PPAK 8 X 8
$7.13
Available to order
Reference Price (USD)
3,000+
$3.89246
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with SIHH24N65E-T1-GE3, a high-quality Transistors - FETs, MOSFETs - Single from Vishay Siliconix. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SIHH24N65E-T1-GE3 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 150mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2814 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 202W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerPAK® 8 x 8
- Package / Case: 8-PowerTDFN
Related Products
Fairchild Semiconductor
FDS6299S
Infineon Technologies
BSC014NE2LSIATMA1
Nexperia USA Inc.
BUK7M6R0-40HX
Diodes Incorporated
BSN20Q-7
onsemi
FCP067N65S3
Vishay Siliconix
SQM50P06-15L_GE3
Texas Instruments
CSD17313Q2Q1T
Taiwan Semiconductor Corporation
TSM220NB06LCR RLG
Vishay Siliconix
SQA600CEJW-T1_GE3
Taiwan Semiconductor Corporation