NTMS3P03R2G
onsemi
onsemi
MOSFET P-CH 30V 2.34A 8SOIC
$0.30
Available to order
Reference Price (USD)
2,500+
$0.28645
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
onsemi presents NTMS3P03R2G, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, NTMS3P03R2G delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2.34A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 85mOhm @ 3.05A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 24 V
- FET Feature: -
- Power Dissipation (Max): 730mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Rohm Semiconductor
R8005ANX
Rohm Semiconductor
SCT3080ALHRC11
Fairchild Semiconductor
FDJ127P
Nexperia USA Inc.
PMV120ENEAR
onsemi
NTD15N06L-1G
Microchip Technology
APT1003RSFLLG
IXYS
IXFN32N120P
Infineon Technologies
IPU50R1K4CEAKMA1
IXYS
IXFR26N100P
Vishay Siliconix