R8005ANX
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 800V 5A TO220FM
$2.28
Available to order
Reference Price (USD)
1+
$1.80000
10+
$1.61700
100+
$1.29930
500+
$1.06750
1,000+
$0.88450
2,500+
$0.85400
Exquisite packaging
Discount
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Experience the power of R8005ANX, a premium Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, R8005ANX is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800 V
- Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.08Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 40W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
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