NTMT190N65S3H
onsemi
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
$4.76
Available to order
Reference Price (USD)
1+
$4.76000
500+
$4.7124
1000+
$4.6648
1500+
$4.6172
2000+
$4.5696
2500+
$4.522
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with NTMT190N65S3H by onsemi, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, NTMT190N65S3H ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1.4mA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 129W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-TDFN (8x8)
- Package / Case: 4-PowerTSFN
Related Products
onsemi
NTD65N03RT4G
Toshiba Semiconductor and Storage
TK7A60W,S4VX
Vishay Siliconix
SI1070X-T1-GE3
Diotec Semiconductor
DI040P04PT-AQ
STMicroelectronics
STB80NF03L-04T4
Nexperia USA Inc.
BUK662R4-40C,118
STMicroelectronics
STW32NM50N
Renesas Electronics America Inc
RJK0366DPA-00#J0
onsemi
FQP8N80C
IXYS