NTMYS3D3N06CLTWG
onsemi
onsemi
MOSFET N-CH 60V 26A/133A LFPAK4
$3.03
Available to order
Reference Price (USD)
1+
$3.02607
500+
$2.9958093
1000+
$2.9655486
1500+
$2.9352879
2000+
$2.9050272
2500+
$2.8747665
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
NTMYS3D3N06CLTWG by onsemi is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, NTMYS3D3N06CLTWG ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.9W (Ta), 100W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK4 (5x6)
- Package / Case: SOT-1023, 4-LFPAK
Related Products
IXYS
IXFX90N60X
Rohm Semiconductor
RD3L220SNFRATL
Infineon Technologies
IPA80R460CEXKSA2
onsemi
NTD60N03-001
Microchip Technology
TN2640N3-G
Infineon Technologies
IRFH8316TRPBF
Fairchild Semiconductor
NDH832P
Micro Commercial Co
MSJPF11N65-BP
Vishay Siliconix
SIHF530STRL-GE3
Infineon Technologies