NTTFS5116PLTAG
onsemi
onsemi
MOSFET P-CH 60V 5.7A 8WDFN
$1.05
Available to order
Reference Price (USD)
1+
$1.05000
500+
$1.0395
1000+
$1.029
1500+
$1.0185
2000+
$1.008
2500+
$0.9975
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NTTFS5116PLTAG by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NTTFS5116PLTAG inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 40W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
Related Products
IXYS
IXFX520N075T2
IXYS
IXTH20P50P
onsemi
FDMC010N08LC
Vishay Siliconix
SIAA40DJ-T1-GE3
Infineon Technologies
BSC105N10LSFGATMA1
Vishay Siliconix
SQ2309ES-T1_GE3
Microchip Technology
VP0550N3-G-P013
Infineon Technologies
IPU60R1K0CE
Rohm Semiconductor
RTF016N05FRATL
Infineon Technologies