NVH4L022N120M3S
onsemi
onsemi
SIC MOS TO247-4L 22MOHM 1200V
$22.73
Available to order
Reference Price (USD)
1+
$22.73000
500+
$22.5027
1000+
$22.2754
1500+
$22.0481
2000+
$21.8208
2500+
$21.5935
Exquisite packaging
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onsemi presents NVH4L022N120M3S, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, NVH4L022N120M3S delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
- Vgs(th) (Max) @ Id: 4.4V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 18 V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 352W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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