NVH4L080N120SC1
onsemi
onsemi
SICFET N-CH 1200V 29A TO247-4
$12.30
Available to order
Reference Price (USD)
1+
$12.30000
500+
$12.177
1000+
$12.054
1500+
$11.931
2000+
$11.808
2500+
$11.685
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NVH4L080N120SC1 by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NVH4L080N120SC1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 5mA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
- Vgs (Max): +25V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 170mW (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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