UJ4SC075006K4S
UnitedSiC
UnitedSiC
750V/6MOHM, SIC, STACKED CASCODE
$70.31
Available to order
Reference Price (USD)
1+
$70.31000
500+
$69.6069
1000+
$68.9038
1500+
$68.2007
2000+
$67.4976
2500+
$66.7945
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with UJ4SC075006K4S by UnitedSiC, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, UJ4SC075006K4S ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 750 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V
- Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 12V
- Vgs(th) (Max) @ Id: 6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 714W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4
- Package / Case: TO-247-4
Related Products
Rectron USA
RM4435
Sanyo
ATP203-TL-H
Diodes Incorporated
DMN6068SEQ-13
Vishay Siliconix
IRFS11N50ATRLP
Infineon Technologies
ISC046N04NM5ATMA1
onsemi
NTLUS4195PZTBG
onsemi
NVMFS5C670NLAFT1G
Nexperia USA Inc.
PSMN5R6-100BS,118
Vishay Siliconix
SIHP33N60EF-GE3
Nexperia USA Inc.