NVMFS5C682NLAFT1G
onsemi
onsemi
MOSFET N-CH 60V 8.8A/25A 5DFN
$1.20
Available to order
Reference Price (USD)
1,500+
$0.26963
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NVMFS5C682NLAFT1G by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NVMFS5C682NLAFT1G inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2V @ 16µA
- Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.5W (Ta), 28W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
Related Products
IXYS
IXFT30N50Q3
Infineon Technologies
IPI034NE7N3G
Vishay Siliconix
IRFI840GPBF
IXYS
IXTA3N120
Vishay Siliconix
IRFBG30PBF
onsemi
NTD20N03L27T4G
IXYS
IXKR47N60C5
Nexperia USA Inc.
PSMN1R0-40YSHX
STMicroelectronics
STF23NM60ND
Alpha & Omega Semiconductor Inc.