PSMN1R0-40YSHX
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 40V 290A LFPAK56
$3.64
Available to order
Reference Price (USD)
1+
$3.64000
500+
$3.6036
1000+
$3.5672
1500+
$3.5308
2000+
$3.4944
2500+
$3.458
Exquisite packaging
Discount
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PSMN1R0-40YSHX by Nexperia USA Inc. is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, PSMN1R0-40YSHX ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 290A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 3.6V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9433 pF @ 20 V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 333W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK56; Power-SO8
- Package / Case: SOT-1023, 4-LFPAK
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