NVMFS6H824NLT1G
onsemi
onsemi
MOSFET N-CH 80V 20A/110A 5DFN
$3.00
Available to order
Reference Price (USD)
1+
$3.00000
500+
$2.97
1000+
$2.94
1500+
$2.91
2000+
$2.88
2500+
$2.85
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with NVMFS6H824NLT1G, a high-quality Transistors - FETs, MOSFETs - Single from onsemi. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, NVMFS6H824NLT1G provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 140µA
- Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 116W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 5-DFN (5x6) (8-SOFL)
- Package / Case: 8-PowerTDFN, 5 Leads
Related Products
Nexperia USA Inc.
BUK7S0R9-40HJ
Diodes Incorporated
DMN61D8LQ-7
Vishay Siliconix
SQ2348ES-T1_GE3
Infineon Technologies
IPU80R1K0CEBKMA1
Diodes Incorporated
DMN13H750S-7
Infineon Technologies
IRL7833STRLPBF
Vishay Siliconix
SIR574DP-T1-RE3
onsemi
NTMYS025N06CLTWG
Sanken
2SK2420
Infineon Technologies