NTMYS025N06CLTWG
onsemi
onsemi
MOSFET N-CH 60V 8.5A/21A 4LFPAK
$4.03
Available to order
Reference Price (USD)
1+
$4.03000
500+
$3.9897
1000+
$3.9494
1500+
$3.9091
2000+
$3.8688
2500+
$3.8285
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with NTMYS025N06CLTWG, a premium Transistors - FETs, MOSFETs - Single from onsemi. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust NTMYS025N06CLTWG for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 27.5mOhm @ 7.5A, 10V
- Vgs(th) (Max) @ Id: 2V @ 13µA
- Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 24W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK4 (5x6)
- Package / Case: SOT-1023, 4-LFPAK
Related Products
Sanken
2SK2420
Infineon Technologies
IRL40SC228
onsemi
NTH4L040N120SC1
Infineon Technologies
IPP80N04S303AKSA1
Diodes Incorporated
DMP2065UQ-13
Nexperia USA Inc.
PMV65XPEAR
IXYS
IXFA18N65X2
Infineon Technologies
IPBE65R099CFD7AATMA1
Diodes Incorporated
DMP2037U-13
Infineon Technologies