NVMYS011N04CTWG
onsemi
onsemi
MOSFET N-CH 40V 13A/35A 4LFPAK
$0.84
Available to order
Reference Price (USD)
1+
$0.84081
500+
$0.8324019
1000+
$0.8239938
1500+
$0.8155857
2000+
$0.8071776
2500+
$0.7987695
Exquisite packaging
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Discover high-performance NVMYS011N04CTWG from onsemi, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, NVMYS011N04CTWG delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 28W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK4 (5x6)
- Package / Case: SOT-1023, 4-LFPAK
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