NVTFS6H860NTAG
onsemi
onsemi
MOSFET N-CH 80V 8A/30A 8WDFN
$0.28
Available to order
Reference Price (USD)
1+
$0.28089
500+
$0.2780811
1000+
$0.2752722
1500+
$0.2724633
2000+
$0.2696544
2500+
$0.2668455
Exquisite packaging
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Upgrade your electronic designs with NVTFS6H860NTAG by onsemi, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, NVTFS6H860NTAG ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 21.1mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-WDFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
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