NVTYS003N03CLTWG
onsemi
onsemi
T6 30V N-CH LL IN LFPAK33
$0.94
Available to order
Reference Price (USD)
1+
$0.94297
500+
$0.9335403
1000+
$0.9241106
1500+
$0.9146809
2000+
$0.9052512
2500+
$0.8958215
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with NVTYS003N03CLTWG, a reliable Transistors - FETs, MOSFETs - Single by onsemi. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, NVTYS003N03CLTWG meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 98A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 59W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-LFPAK
- Package / Case: SOT-1205, 8-LFPAK56
Related Products
Infineon Technologies
IPB80N04S306ATMA1
Fairchild Semiconductor
HUFA75321D3
Infineon Technologies
IPD068P03L3GATMA1
Nexperia USA Inc.
BUK764R0-55B,118
Toshiba Semiconductor and Storage
TK13A45D(STA4,Q,M)
Vishay Siliconix
SQJQ141EL-T1_GE3
Fairchild Semiconductor
FDMS2508SDC
NXP USA Inc.
BUK624R5-30C,118
Panjit International Inc.
PJMP990N65EC_T0_00001
Renesas Electronics America Inc