NVTYS010N04CTWG
onsemi
onsemi
T6 40V N-CH SL IN LFPAK33
$0.76
Available to order
Reference Price (USD)
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$0.75799
500+
$0.7504101
1000+
$0.7428302
1500+
$0.7352503
2000+
$0.7276704
2500+
$0.7200905
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NVTYS010N04CTWG by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NVTYS010N04CTWG inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 32W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-LFPAK
- Package / Case: SOT-1205, 8-LFPAK56
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