NXH010P120MNF1PNG
onsemi
onsemi
PIM F1 SIC HALFBRIDGE 1200V 10MO
$125.33
Available to order
Reference Price (USD)
1+
$125.33286
500+
$124.0795314
1000+
$122.8262028
1500+
$121.5728742
2000+
$120.3195456
2500+
$119.066217
Exquisite packaging
Discount
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Optimize your electronic circuits with onsemi s NXH010P120MNF1PNG, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how NXH010P120MNF1PNG can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
- Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 40mA
- Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
- Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
- Power - Max: 250W (Tj)
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: -