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NXH010P120MNF1PNG

onsemi
NXH010P120MNF1PNG Preview
onsemi
PIM F1 SIC HALFBRIDGE 1200V 10MO
$125.33
Available to order
Reference Price (USD)
1+
$125.33286
500+
$124.0795314
1000+
$122.8262028
1500+
$121.5728742
2000+
$120.3195456
2500+
$119.066217
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 114A (Tc)
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 100A, 20V
  • Vgs(th) (Max) @ Id: 4.3V @ 40mA
  • Gate Charge (Qg) (Max) @ Vgs: 454nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4707pF @ 800V
  • Power - Max: 250W (Tj)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -

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