NXH200T120H3Q2F2STNG
onsemi
onsemi
80KW GEN-II Q2PACK-200A MODULE W
$122.76
Available to order
Reference Price (USD)
1+
$122.75500
500+
$121.52745
1000+
$120.2999
1500+
$119.07235
2000+
$117.8448
2500+
$116.61725
Exquisite packaging
Discount
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Maximize efficiency in your power electronics with the NXH200T120H3Q2F2STNG IGBT Module by onsemi. Perfect for elevators and conveyor systems, it features low switching losses and high noise immunity. onsemi leads in innovation contact us for expert support and competitive pricing.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 330 A
- Power - Max: 679 W
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: 35.615 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: 56-PIM/Q2PACK (93x47)
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