NXH35C120L2C2S1G
onsemi
onsemi
IGBT MOD 1200V 35A 26DIP
$60.63
Available to order
Reference Price (USD)
1+
$60.63167
500+
$60.0253533
1000+
$59.4190366
1500+
$58.8127199
2000+
$58.2064032
2500+
$57.6000865
Exquisite packaging
Discount
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onsemi's NXH35C120L2C2S1G IGBT Module offers exceptional reliability for critical applications like aerospace and defense. With features such as avalanche ruggedness and low VCE(sat), it ensures optimal performance. Trust onsemi for advanced Discrete Semiconductor Products. Ask about customization options!
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 35 A
- Power - Max: 20 mW
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 35A
- Current - Collector Cutoff (Max): 250 µA
- Input Capacitance (Cies) @ Vce: 8.33 nF @ 20 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 26-PowerDIP Module (1.199", 47.20mm)
- Supplier Device Package: 26-DIP
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