P3M06060K4
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 650V 48A TO247-4
$10.38
Available to order
Reference Price (USD)
1+
$10.38000
500+
$10.2762
1000+
$10.1724
1500+
$10.0686
2000+
$9.9648
2500+
$9.861
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance P3M06060K4 from PN Junction Semiconductor, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, P3M06060K4 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 48A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 79mOhm @ 20A, 15V
- Vgs(th) (Max) @ Id: 2.4V @ 5mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +20V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 188W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
Related Products
Infineon Technologies
IPI80N04S4L04AKSA1
onsemi
NTGS3443BT1G
IXYS
IXTX102N65X2
onsemi
NVMFS5C450NAFT1G
Diodes Incorporated
BSS84Q-13-F
onsemi
IRF510
Diodes Incorporated
ZVN2106GTA
Vishay Siliconix
IRLR120PBF
Wolfspeed, Inc.
E3M0120090J
Alpha & Omega Semiconductor Inc.