P3M12160K3
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 1200V 19A TO-247-3
$8.83
Available to order
Reference Price (USD)
1+
$8.83000
500+
$8.7417
1000+
$8.6534
1500+
$8.5651
2000+
$8.4768
2500+
$8.3885
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose P3M12160K3 by PN Junction Semiconductor. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with P3M12160K3 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 19A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V
- Vgs(th) (Max) @ Id: 2.4V @ 2.5mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +21V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 110W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3L
- Package / Case: TO-247-3
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