PAA12400BM3
PN Junction Semiconductor
PN Junction Semiconductor
1200V HALF-BRIDGE
$882.36
Available to order
Reference Price (USD)
1+
$882.36000
500+
$873.5364
1000+
$864.7128
1500+
$855.8892
2000+
$847.0656
2500+
$838.242
Exquisite packaging
Discount
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Discover high-performance PAA12400BM3 from PN Junction Semiconductor, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let PN Junction Semiconductor s PAA12400BM3 enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 350A
- Rds On (Max) @ Id, Vgs: 7.3mOhm @ 300A, 20V
- Vgs(th) (Max) @ Id: 5V @ 100mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 29.5pF @ 1000V
- Power - Max: -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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