PBLS4003V,115
NXP USA Inc.
NXP USA Inc.
TRANS NPN PREBIAS/PNP SOT666
$0.07
Available to order
Reference Price (USD)
1+
$0.07000
500+
$0.0693
1000+
$0.0686
1500+
$0.0679
2000+
$0.0672
2500+
$0.0665
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Select NXP USA Inc.'s PBLS4003V,115 for superior Pre-Biased Transistor Array performance in demanding electronic environments. These BJT arrays deliver time-saving solutions with their integrated resistor networks and matched transistor characteristics. Ideal for audio amplifiers, level shifters, and digital logic interfaces in commercial and industrial equipment. Performance highlights include wide operating voltage ranges, excellent linearity, and resistance to thermal runaway. As a trusted semiconductor supplier, NXP USA Inc. offers flexible packaging options and reliable delivery schedules. Whether you need samples or production quantities, begin by submitting your PBLS4003V,115 inquiry our team awaits your requirements!
Specifications
- Product Status: Obsolete
- Transistor Type: 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max): 100mA, 500mA
- Voltage - Collector Emitter Breakdown (Max): 50V, 40V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 150 @ 100mA. 2V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: 300MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
Related Products
Toshiba Semiconductor and Storage
RN1962FE(TE85L,F)
Rohm Semiconductor
EMH59T2R
Toshiba Semiconductor and Storage
RN1904FE,LF(CT
onsemi
SMUN5311DW1T3G
Toshiba Semiconductor and Storage
RN4603(TE85L,F)
Nexperia USA Inc.
PEMD30,315
onsemi
SMUN5111T1
Nexperia USA Inc.
PEMH14,115
onsemi
EMG2DXV5T5G
Diodes Incorporated