Shopping cart

Subtotal: $0.00

PCDH20120CCG1_T0_00601

Panjit International Inc.
PCDH20120CCG1_T0_00601 Preview
Panjit International Inc.
1200V SIC SCHOTTKY BARRIER DIODE
$14.32
Available to order
Reference Price (USD)
1+
$14.32000
500+
$14.1768
1000+
$14.0336
1500+
$13.8904
2000+
$13.7472
2500+
$13.604
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io) (per Diode): 10A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
  • Operating Temperature - Junction: -55°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD

Related Products

Infineon Technologies

DD1000S33HE3BPSA1

Vishay General Semiconductor - Diodes Division

VS-HFA08TA60CSR-M3

Diodes Incorporated

SDT30100GCTFP

Vishay General Semiconductor - Diodes Division

VS-MURB1620CTRHM3

Vishay General Semiconductor - Diodes Division

V20PW15C-M3/I

Vishay General Semiconductor - Diodes Division

V10D60CHM3_A/I

Nexperia USA Inc.

BAS70-04,235

GeneSiC Semiconductor

MURT30040

SMC Diode Solutions

16CTQ080

Global Power Technology-GPT

G4S12040BM

Top